Methods of forming fine patterns in the fabrication of semiconductor devices

ABSTRACT

In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region. The feature layer is etched using the mask layer patterns as an etch mask in the second region and using the spacers as an etch mask in the first region to provide a feature layer pattern having fine features in the first region and broad features in the second region.

RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/290,420, filed on Oct. 30, 2008, which claims priority under 35U.S.C. 119 to Korean Patent Application No. 10-2008-0057020, filed onJun. 17, 2008, the contents of which are incorporated herein byreference in their entirety.

BACKGROUND

With the continued emphasis on highly integrated electronic devices,there is an ongoing need for semiconductor memory devices that operateat higher speeds and lower power and that have increased device density.To accomplish this, there is a pressing need to form devices withaggressive scaling of miniaturized device patterns of ever-smaller linewidths.

With increased pressure on the design rules, including, for example,structure size and pitch of semiconductor devices, it has becomeincreasingly difficult to form sufficiently fine pitch patterns due tothe resolution limitations of conventional photolithography processesthat are used to form the patterns. However, such finely dimensionedline and space patterns, known as “L/S patterns” are critical to devicedesign and integration.

Among the various methods proposed to improve the resolution ofconventional photolithography processes, one method, known as theself-aligned-reverse patterning method, or SARP method, has enjoyedwidespread popularity. In this approach, a first photolithographypattern is applied to an underlying layer to be patterned. The firstphotolithography deposition applies structures that are at or near thesize and pitch resolution limitations of the photolithography system. Aspacer layer is deposited on the resulting structures. The spacer layeris anisotropically etched to form spacers at sidewalls of thestructures. The resulting dimensions of the spacers can be accuratelycontrolled by controlling the etch parameters. The original structuresare removed, and the spacers remain as an etch mask that can be used topattern the underlying layer, to result in structures that are finer inwidth and closer in pitch that that attainable by the photolithographysystem itself.

There are certain limitations, however, that limit the success of thisapproach. For example, in a case where certain high-density regions of adevice are to include high-density patterns having relatively narrowerwidth and tighter pitch, and low-density regions of a device are toinclude low-density patterns having relatively larger width and are morespaced apart in pitch, the low-density patterns and high-densitypatterns are patterned at different times, using different processes.For example, the low-density patterns can be patterned usingconventional photolithography tooling, and the high-density patterns, onthe same device, are patterned using the SARP approach. As a result,misalignment can occur between the low-density patterns and thehigh-density patterns, as they are patterned at different times. Also,since they are patterned at different times, extra photolithographysteps are required, increasing manufacturing costs.

SUMMARY

Embodiments of the present invention are directed to methods of formingsemiconductor devices having both fine patterns, or features, in a firstregion, and broad patterns, or features, in a second region in a mannerthat addresses the limitations associated with conventional approaches.In particular, the fine features and broad features of a layer to bepatterned, or feature layer, can be formed at the same time, eliminatingthe possibility of their respective misalignment, and simplifyingfabrication by reducing the number of photolithography steps required.This results in a more-reliable fabrication process that is moreeconomical for production of the end-device.

In one aspect, a method of forming a semiconductor device comprises:providing a feature layer on a substrate; providing a mask layer on thefeature layer; removing a portion of the mask layer in a first region ofthe semiconductor device where fine features of the feature layer are tobe located, the mask layer remaining in a second region of thesemiconductor device where broad features of the feature layer are to belocated; providing a mold mask pattern on the feature layer in the firstregion and on the mask layer in the second region; providing a spacerlayer on the mold mask pattern in the first region and in the secondregion; performing an etching process to etch the spacer layer so thatspacers remain at sidewalls of pattern features of the mold maskpattern, and to etch the mask layer in the second region to provide masklayer patterns in the second region; and etching the feature layer usingthe mask layer patterns as an etch mask in the second region and usingthe spacers as an etch mask in the first region to provide a featurelayer pattern having fine features in the first region and broadfeatures in the second region.

In one embodiment, performing an etching process to etch the mask layerin the second region is performed using the mold mask pattern andspacers as an etch mask.

In another embodiment, the semiconductor device is a memory device,wherein the first region is a cell region of the memory device andwherein the second region is peripheral region of the memory device.

In another embodiment, the feature layer comprises a conductive layer onthe substrate.

In another embodiment, the feature layer patterns comprise gate patternsof the semiconductor device.

In another embodiment, the feature layer patterns comprise interconnectlines of the semiconductor device.

In another embodiment, the interconnect lines comprise bit lines of thesemiconductor device.

In another embodiment, the feature layer pattern comprises a second masklayer pattern used to define regions in the substrate.

In another embodiment, the defined regions are active regions of thesubstrate.

In another embodiment, providing the mask layer comprises providing afirst mask layer on the feature layer and providing a second mask layeron the first mask layer.

In another embodiment, removing a portion of the mask layer in the firstregion, the mask layer remaining in a second region of the semiconductordevice comprises: removing a portion of the second mask layer in thefirst region, the second mask layer remaining in a second region of thesemiconductor device, and the first mask layer remaining in the firstand second regions of the semiconductor device; and wherein etching thefeature layer further comprises etching the first mask layer in thefirst region and in the second region.

In another embodiment, providing the first mask layer on the featurelayer and providing a second mask layer on the first mask layercomprises sequentially providing first and second sub-mask layers on thefeature layer and providing the second mask layer on the second sub-masklayer.

In another embodiment, the method further comprises, followingperforming an etching process to etch the mask layer in the secondregion to provide mask layer patterns in the second region: applying aseparation mask in the second region, the separation mask exposing atleast one mask layer pattern in the second region; and etching theexposed portion of the at least one mask layer pattern in the secondregion to separate the at least one mask layer pattern into first andsecond separated mask layer patterns, and wherein etching the featurelayer using the mask layer patterns as an etch mask in the second regioncomprises etching the feature layer using the first and second separatedmask layer patterns as an etch mask.

In another aspect, a method of forming a memory system including: amemory controller that generates command and address signals; and amemory module comprising a plurality of memory devices is provided. Thememory module receives the command and address signals and in responsestores and retrieves data to and from at least one of the memorydevices, wherein each memory device comprises: a plurality ofaddressable memory cells in a cell region of the memory device; and adecoder in a peripheral region of the memory device that receives anaddress from an external source, and that generates a row signal and acolumn signal for accessing at least one of the addressable memory cellsduring programming and read operations. The method further comprisesforming the memory device comprising: providing a feature layer on asemiconductor substrate; providing a mask layer on the feature layer;removing a portion of the mask layer in the cell region of the memorydevice where fine features of the feature layer are to be located, themask layer remaining in the peripheral region of the memory device wherebroad features of the feature layer are to be located; providing a moldmask pattern on the feature layer in the cell region and on the masklayer in the peripheral region; providing a spacer layer on the moldmask pattern in the cell region and in the peripheral region; performingan etching process to etch the spacer layer so that spacers remain atsidewalls of pattern features of the mold mask pattern, and to etch themask layer in the peripheral region to provide mask layer patterns inthe peripheral region; and etching the feature layer using the masklayer patterns as an etch mask in the peripheral region and using thespacers as an etch mask in the cell region to provide a feature layerpattern having fine features in the cell region and broad features inthe peripheral region.

In one embodiment, performing an etching process to etch the mask layerin the peripheral region is performed using the mold mask pattern andspacers as an etch mask.

In another embodiment, the feature layer comprises a conductive layer onthe substrate.

In another embodiment, the feature layer patterns comprise gate patternsof the memory device.

In another embodiment, the feature layer patterns comprise interconnectlines of the memory device.

In another embodiment, the interconnect lines comprise bit lines of thememory device.

In another embodiment, the feature layer pattern comprises a second masklayer pattern used to define regions in the semiconductor substrate.

In another embodiment, the defined regions are active regions of thesemiconductor substrate.

In another embodiment, providing the mask layer comprises providing afirst mask layer on the feature layer and providing a second mask layeron the first mask layer.

In another embodiment, removing a portion of the mask layer in the cellregion, the mask layer remaining in the peripheral region of thesemiconductor device comprises: removing a portion of the second masklayer in the cell region, the second mask layer remaining in theperipheral region of the memory device, and the first mask layerremaining in the cell and peripheral regions of the memory device; andwherein etching the feature layer further comprises etching the firstmask layer in the cell region and in the peripheral region.

In another embodiment, providing the first mask layer on the featurelayer and providing a second mask layer on the first mask layercomprises sequentially providing first and second sub-mask layers on thefeature layer and providing the second mask layer on the second sub-masklayer.

In another embodiment, the method further comprises, followingperforming an etching process to etch the mask layer in the peripheralregion to provide mask layer patterns in the peripheral region: applyinga separation mask on the peripheral region, the separation mask exposingat least one mask layer pattern in the peripheral region; and etchingthe exposed portion of the at least one mask layer pattern in theperipheral region to separate the at least one mask layer pattern intofirst and second separated mask layer patterns, and wherein etching thefeature layer using the mask layer patterns as an etch mask in theperipheral region comprises etching the feature layer using the firstand second separated mask layer patterns as an etch mask.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, features and advantages of theembodiments of the invention will be apparent from the more particulardescription of preferred embodiments of the invention, as illustrated inthe accompanying drawings in which like reference characters refer tothe same parts throughout the different views. The drawings are notnecessarily to scale, emphasis instead being placed upon illustratingthe principles of the invention. In the drawings:

FIG. 1 is a block diagram of a NAND-flash memory device, illustrating anexample application of the embodiments the present invention. FIG. 2 isa schematic diagram of the device of FIG. 1.

FIG. 3 is top layout view of a NAND-flash memory device, formed inaccordance with embodiments of the present invention.

FIGS. 4A-14A are top plan views of a method for forming fine patternsand broad patterns in the example NAND-flash memory device of FIG. 3, inaccordance with embodiments of the present invention. FIGS. 4B-14B arecross-sectional views taken along section lines A-A′, B-B′, and C-C∝ ofFIGS. 4A-14A, in accordance with embodiments of the present invention

FIG. 15 is a block diagram of a memory card that includes asemiconductor device formed in accordance with the embodiments of thepresent invention.

FIG. 16 is a block diagram of a memory system that employs a memorymodule, formed in accordance with the embodiments of the presentinvention.

DETAILED DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will now be described more fullyhereinafter with reference to the accompanying drawings, in whichpreferred embodiments of the invention are shown. This invention may,however, be embodied in different forms and should not be construed aslimited to the embodiments set forth herein. Like numbers refer to likeelements throughout the specification.

It will be understood that, although the terms first, second, etc. areused herein to describe various elements, these elements should not belimited by these terms. These terms are used to distinguish one elementfrom another. For example, a first element could be termed a secondelement, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present invention. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will be understood that when an element is referred to as being “on”or “connected” or “coupled” to another element, it can be directly on orabove, or connected or coupled to, the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly on” or “directly connected” or “directly coupled” toanother element, there are no intervening elements present. Other wordsused to describe the relationship between elements should be interpretedin a like fashion (e.g., “between” versus “directly between,” “adjacent”versus “directly adjacent,” etc.). When an element is referred to hereinas being “over” another element, it can be over or under the otherelement, and either directly coupled to the other element, orintervening elements may be present, or the elements may be spaced apartby a void or gap.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the invention. As usedherein, the singular forms “a,” “an” and “the” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

FIG. 1 is a block diagram of a NAND-flash memory device, illustrating anexample application of the embodiments the present invention. FIG. 2 isa schematic diagram of the device of FIG. 1. Referring to FIGS. 1 and 2,a memory device, such as a NAND-flash memory device includes a memorycell array 100 comprising an array of memory cells arranged in ahigh-density configuration. Peripheral circuitry for accessing anddriving the array includes an X-decoder block 110 responsible forselecting a word line WL of the cell array 100 to be accessed, forexample, word lines WL₀-WL_(m). A Y-decoder block 120 is responsible forselecting a bit line BL of the cell array 100 to be activated, forexample, bit lines BL₀-BL_(n). A Y-path circuit 130 connected to thecell array 100 is responsible for assigning the bit line path based onthe output of the Y-decoder block 120.

Referring to FIG. 2, a cell string 10 of the memory cell array 100includes a string select transistor 16, a plurality of memory celltransistors 12, and a ground select transistor 14 connected in series. Agate of the string select transistor 16 is connected to the stringselect line SSL and a gate of the ground select transistor 14 isconnected to the ground select line GSL. A gate of each memory celltransistor 12 in the string 16 is connected to one of the word linesWL₀-WL_(m). The memory cell transistors 12 include charge storagestructures and thereby operate as non-volatile devices which retaininformation after power is removed from the device. Bit lines BL₀-BL_(n)of the device are connected between output terminals of string selecttransistors SSL of a common row.

FIG. 3 is top layout view of the example NAND-flash memory device ofFIGS. 1 and 2 above, formed in accordance with embodiments of thepresent invention. Referring to FIG.3, a memory device, such as a NANDflash memory, commonly includes a number of different circuit regions,each having circuit structures with certain size and pitchcharacteristics. For example, the device of FIG. 3 includes a cell arrayregion 300A, a cell contact region 300B and a peripheral circuit region300C. In one example, the broadly patterned X-decoder and Y-decodercircuitry of FIG. 1 can be formed in the peripheral circuit region 300Cof the device, where design constraints are not as stringent. At thesame time, the memory cell array 100 can be formed in the memory cellregion 300A of the device. In general, the memory cell region 300A hasthe highest demand for density in the device, and therefore, finelypatterned structures are desired in the memory cell region 300A. Thecell contact region 300B serves as the interface between the memory cellregion 300A and the peripheral circuit region. Therefore, in the cellcontact region 300B, it is common to have both finely patternedstructures and broadly patterned structures.

For purposes of the present disclosure, the terms “broad”, “broadly”,“wide” and the like when referring to patterning of layers, features, orstructures of a device refer to patterns, features, or structures thatcan be formed using conventional photolithographic techniques anddimensioned or spaced apart from each other by distances that are atleast as large as those readily attained under the resolution of thephotolithography system. The terms “fine”, “finely”, “narrow” and thelike when referring to patterning of layers, features, or structures ofa device refer to patterns, features, or structures that cannot beformed using conventional photolithographic techniques and aredimensioned or spaced apart from each other by distances that are lessthan those readily attained under the resolution of the photolithographysystem used in their formation. For example, patterns, features, orstructures that are “fine” or “narrow” may require the use of sidewallspacers and etching techniques in defining their eventual geometries andspacings.

It can be seen in the highlighted region identified within Box IV, thatpatterns of various widths are desired to be formed. For example, theconductive lines 301 . . . 332 comprising, for example, conductive linesfor bit lines and word lines of the device, are patterns of a fine widthW1 and are at a fine pitch. At the same time, the string select lineSSL, in parallel with the conductive lines 301 . . . 332, is formed at amuch broader width of W2, while the ground select line GSL, likewise inparallel with the conductive lines 301 . . . 332, is formed at a muchbroader width of W3. Also, in the cell contact region 300B, it can beseen that relatively broadly patterned contacts 352 are required for therelatively narrowly patterned conductive lines 301 . . . 332.

Embodiments of the present invention provide fabrication techniques forforming both narrowly patterned features and broadly patterned featuresin a manner that mitigates or eliminates the possibility of theirrespective misalignment, and that simplifies fabrication by reducing thenumber of photolithography steps required. This results in amore-reliable fabrication process that is more economical for productionof the end-device.

FIGS. 4A-14A are top plan views of a method for forming fine patternsand broad patterns in the example NAND-flash memory device of FIG. 3, inaccordance with embodiments of the present invention. FIGS. 4B-14B arecross-sectional views taken along section lines A-A′, B-B′, and C-C∝ ofFIGS. 4A-14A, in accordance with embodiments of the present invention.

In particular FIGS. 4A-14A and 4B-14B illustrate formation of thepatterns illustrated in Box IV of FIG. 3 for illustrating the principlesof the embodiments of the present specification.

Referring to FIGS. 4A and 4B, a layer to be patterned 430, or featurelayer, is provided on a substrate 400. The layer to be patterned 430 canbe formed of any of a number of relevant materials. In one example, thelayer to be patterned 430 can comprise an active region, or otherregion, of the substrate 400 itself, such as a semiconductor substrate400. In another example, the layer to be patterned can itself comprise amasking layer that is used to define patterns in an underlying substrateor material layer. In this case, the layer to be patterned 430 can be amask layer used to define regions of the substrate 400. In anotherexample, the layer to be patterned 430 can comprise a conductive layerthat is formed on an underlying insulating layer in turn formed on thesubstrate 400. In another example, the layer to be patterned 430 cancomprise a gate electrode of a transistor. In another example, the layerto be patterned 430 can comprise a conductive line of a device, such asa bit line or word line of the device. When forming a gate electrode,the layer to be patterned 430 can comprise, for example, a materialselected from the group consisting of TaN, TiN, W, WN, HfN, and WSi, anda combination of two or more of these materials. When forming a bitline, the layer to be patterned 430 can comprise, for example, a metalor metal alloy material, such as tungsten or aluminum. In a case wherethe layer to be patterned 430 comprises a conductive layer that requiresisolation from the underlying substrate 400, and insulative layer (notshown) can be provided between the layer to be patterned 430 and thesubstrate.

A first hard mask layer 432 is applied to the layer to be patterned 430.An optional second hard mask layer 434 and optional third hard masklayer 440 can be applied to the first hard mask layer 432. In a casewhere first and second hard mask layers 432, 434 are used, the first andsecond hard mask layers 432, 434 should have etch selectivity withrespect to each other. In a case where first, second, and third hardmask layers 432, 434, 440 are used, the first and third hard mask layers432, 440 should have etch selectivity with respect to the second hardmask layer 434. Additional hard mask layers can be applied accordingly,as desired.

In various examples, the hard mask layers 432, 434, 440 can comprise anyof a number of suitable materials. In one embodiment, the first hardmask layer 432 can comprise oxide, in which case the second hard masklayer 434 can comprise polysilicon or nitride. The third hard mask layer440 can comprise a material having the same etch selectivity as that ofthe first hard mask layer 432; therefore, in this example, the thirdhard mask layer 440 can comprise oxide. Other suitable materials for thehard mask layers 432, 434, 440 are equally applicable to the embodimentsof the present specification.

Referring to FIGS. 5A and 5B, the third hard mask layer 440 is patternedto remove the third hard mask layer 440 in regions or portions of thedevice where fine, or narrow, features of the feature layer, or layer tobe patterned 430, are to be located. At the same time, the resultingthird hard mask layer pattern 440 a remains in regions or portions ofthe device where broad features of the feature layer, or layer to bepatterned 430, are to be located. In this example, the third hard masklayer pattern 440 a exposes regions of the device where the relativelyfine, or narrow, conductive lines 301 . . . 332 are to be formed. At thesame time, the third hard mask layer pattern 440 a remains in regions ofthe device where the relatively broad ground select line GSL andcontacts 352 are to be formed. Alternatively, in a case where only oneor two hard mask layers are employed, an uppermost hard mask layer ofthe hard mask layers 432, 434 is patterned as described above.

Referring to FIGS. 6A and 6B, a mold mask pattern 450 is provided on theresulting structure. In particular, the mold mask pattern 450 caninclude relatively narrow first portions 450(450 s) that, for example,can correspond with the conductive lines 301 . . . 332 to be formed inthe portions of the device where fine, or narrow, features of thefeature layer, or layer to be patterned 430, are to be located. Thefirst portions 450(450 s) of the mold mask pattern 450 are positioned onthe second hard mask layer 434. The mold mask pattern 450 can furtherinclude relatively broad second portions 450(450 w) that, for example,can correspond with the ground select line GSL and contacts 352 to beformed in the portions of the device where broad features of the featurelayer, or layer to be patterned 430, are to be located. The secondportions 450(450 w) of the mold mask pattern 450 are positioned on theremaining portions of the third hard mask layer pattern 440 a. Referringto FIG. 6A, this view shows that in some cases, the first portions450(450 s) of the mold mask pattern can be connected to the secondportions 450(450 w) of the mold mask pattern, whereas, in other cases,they are isolated from each other.

The mold mask layer 450 can comprise, in one embodiment, acarbon-containing layer or a polysilicon layer. In the event acarbon-containing material layer is used, the mold mask layer 450 cancomprise a hybrocarbon having an aromatic ring or organic compoundcomprising its derivative. For example, the mold mask layer material 450can comprise an organic compound having an aromatic ring, such asphenyl, benzene, or naphthalene. Alternatively, the mold mask layermaterial 450 can comprise a material having a relatively high carbonlevel of 85-99 wt % of the organic compound. In one embodiment, the moldmask layer 450 can be applied using a spin-coating process, and can bepatterned using conventional photolithography techniques.

Referring to FIGS. 7A and 7B, a conformal spacer layer 460 is applied tothe resulting structure, covering a top and sidewalls of the mold masklayer pattern 450. In one embodiment, the spacer layer 460 is formed ofa material that has etch selectivity with regard to the material of themold mask layer 450 and the underlying second hard mask layer 434.

Referring to FIGS. 8A and 8B, the spacer layer 460 is etched to formsidewall spacers 460 a at sidewalls of the mold mask layer patternelements 450. Referring to FIG. 8A, it can be seen that the resultingsidewall spacers 460 border the perimeter of the original mold masklayer pattern elements 450. Following this, the third hard mask layerpattern 440 a is etched to form third hard mask layer pattern 440 b,using the mold mask layer pattern 450 and the spacers 460 a as an etchmask.

Alternatively, in an embodiment where the spacer layer 460 and the thirdhard mask layer 440 are the same material, the etching of the spacerlayer 460 to form the sidewall spacers 460 a also results in an etchingof the third hard mask layer pattern 440 a to form third hard mask layerpattern 440 b. In this case, the etching of the sidewall spacers 460 aand the third hard mask layer pattern 440 b can be performed in a singlestep.

Referring to FIGS. 9A and 9B, the mold mask layer pattern 450 isselectively removed. As a result the spacer structures 460 a remain. Inparticular, the spacer structures 460 a can include first spacerstructures 460 a that are closely spaced apart at a narrow pitch tocorrespond with the conductive lines 301 . . . 332 to be formed in theportions of the device where fine, or narrow, features of the featurelayer, or layer to be patterned 430, are to be located. The first spacerstructures 460 a are positioned on the second hard mask layer 434 inthis example. The first spacer structures 460 a can further includesecond spacer structures 460 a that are relatively more further spacedapart at a broader pitch that, for example, can correspond with theground select line GSL and contacts 352 to be formed in the portions ofthe device where broad features of the feature layer, or layer to bepatterned 430, are to be located. The second spacer structures 460 a arepositioned on the remaining portions of the third hard mask layerpattern 440 b in this example. In a case where the mold mask pattern 450material comprises a carbon-containing layer, it can be removed byperforming an ashing and stripping procedure.

Referring to FIGS. 10A and 10B, a separation mask pattern 470 is appliedto the resulting structure. In the present example, the separation maskpattern 470 exposes a portion of the underlying third hard mask layerpattern 440 b. In one embodiment, the separation mask pattern 470 isapplied using conventional photolithography techniques.

Referring to FIGS. 11A and 11B, the third hard mask layer pattern 440 bis etched using the separation mask pattern as an etch mask to formthird hard mask layer pattern 440 c. In this manner, portions of thethird hard mask layer pattern 440 b are separated into independentportions 440 c. In addition, formerly connected portions of the sidewallspacers 460 a are likewise separated into independent portions. Inparticular, this trimming procedure is applicable to low-density regionsof the device, for example, in the cell contact region 300B. In thisexample, separated portions of the third hard mask layer pattern 440 cin the cell contact region 300B correspond with separated contacts 352to be formed during subsequent processes.

Referring to FIGS. 12A and 12B, the second hard mask layer 434 is etchedusing the sidewall spacers 460 a, the third hard mask pattern 440 b andthe third hard mask pattern 440 c as an etch mask to form a patternedsecond hard mask layer 434 a.

Referring to FIGS. 13A and 13B, the first hard mask layer 432 is etchedusing the patterned second hard mask layer 434 a and any remainingportions of the sidewall spacers 460 a, the third hard mask pattern 440b and the third hard mask pattern 440 c as an etch mask to form apatterned first hard mask layer 432 a. As a result of this procedure,the feature layer, or layer to be patterned 430 is exposed.

Referring to FIGS. 14A and 14B, the feature layer, or layer to bepatterned 430, is etched and patterned using the patterned first hardmask layer 432 a and any remaining portions of the second hard masklayer pattern 434 a as an etch mask to form a patterned feature layer430. The patterned feature layer 430 in this example, includes fine, ornarrow, first features 430 a which operate as conductive lines 301 . . .332 of the device. The first features 430 a can be of a fine width orfine pitch that is less than a width or pitch that would otherwise beattainable by the resolution of the photolithography system used. Forexample, the first features 430 a can be one-half of the otherwiseattainable width or pitch. In addition, the patterned feature layer 430,includes relatively broad second and third features 430 b, 430 c whichoperate as the ground select line GSL and contacts 352 of the device.

It will be apparent that the first and second hard mask layers 432, 434and the steps involved in their subsequent patterning are optional, andnot required, depending on the application. Multiple masking layers aredesirable in fabrication processes as pattern widths continue todecrease in size. The number of layers and the types of materials usedfor the mask layers depend on the level of integration and thefabrication process employed.

FIG. 15 is a block diagram of a memory card that includes asemiconductor device in accordance with the embodiments of the presentinvention. The memory card 1200 includes a memory controller 1220 thatgenerates command and address signals C/A and a memory module 1210 forexample, flash memory 1210 that includes one or a plurality of flashmemory devices. The memory controller 1220 includes a host interface1223 that transmits and receives command and address signals to and froma host, a controller 1224, and a memory interface 1225 that in turntransmits and receives the command and address signals to and from thememory module 1210. The host interface 1223, the controller 1224 andmemory interface 1225 communicate with controller memory 1221 andprocessor 1222 via a common bus.

The memory module 1210 receives the command and address signals C/A fromthe memory controller 1220, and, in response, stores and retrieves dataDATA I/O to and from at least one of the memory devices on the memorymodule 1210. Each memory device includes a plurality of addressablememory cells and a decoder that receives the receives the command andaddress signals, and that generates a row signal and a column signal foraccessing at least one of the addressable memory cells duringprogramming and read operations.

Each of the components of the memory card 1200, including the memorycontroller 1220, electronics 1221, 1222, 1223, 1224, and 1225 includedon the memory controller 1220 and the memory module 1210 can be formedto include fine patterns using processing techniques in accordance withthe embodiments disclosed herein.

FIG. 16 is a block diagram of a memory system 1300 that employs a memorymodule 1310, for example, of the type described herein. The memorysystem 1300 includes a processor 1330, random access memory 1340, userinterface 1350 and modem 1320 that communicate via a common bus 1360.The devices on the bus 1360 transmit signals to and receive signals fromthe memory card 1310 via the bus 1360. Each of the components of thememory system 1300, including the processor 1330, random access memory1340, user interface 1350 and modem 1320 along with the memory card 1310can be formed to include fine patterns using processing techniques inaccordance with the embodiments disclosed herein. The memory system 1300can find application in any of a number of electronic applications, forexample, those found in consumer electronic devices such as solid statedrives (SSD), CMOS image sensors (CIS) and computer application chipsets.

The memory systems and devices disclosed herein can be packaged in anyof a number of device package types, including, but not limited to, ballgrid arrays (BGA), chip scale packages (CSP), plastic leaded chipcarrier (PLCC) plastic dual in-line package (PDIP), multi-chip package(MCP), wafer-level fabricated package (WFP), and wafer-level processedstock package (WSP).

While embodiments of the invention have been particularly shown anddescribed with references to preferred embodiments thereof, it will beunderstood by those skilled in the art that various changes in form anddetails may be made herein without departing from the spirit and scopeof the invention as defined by the appended claims.

1. A semiconductor device comprising: a substrate; a finely patternedconductive line formed on the substrate, wherein a first portion of thefinely patterned conductive line extends in a first direction and asecond portion of the finely patterned conductive line extends in asecond direction, wherein the second direction is perpendicular to thefirst direction; and a broadly patterned conductive contact adjacent toan end of the second portion of the finely patterned conductive line,wherein a sidewall of the second portion of the finely patternedconductive line is aligned with a sidewall of the broadly patternedconductive contact.
 2. The semiconductor device of claim 1, whereinbottom surfaces of the finely patterned conductive line and the broadlypatterned conductive contact are coplanar.
 3. The semiconductor deviceof claim 1, wherein a minimum feature size of the broadly patternedconductive contact is greater than a feature size of the finelypatterned conductive line, and wherein the finely patterned conductiveline comprises feature size not readily attainable under the resolutionof the photolithography system used in their formation.
 4. Thesemiconductor device of claim 1, wherein the substrate comprises a cellarray region and a cell contact region, wherein the finely patternedconductive line is formed in the cell array region and the cell contactregion, and wherein the broadly patterned conductive line is formed inthe cell contact region.
 5. A semiconductor device comprising: asubstrate; a pair of finely patterned conductive lines formed on thesubstrate, wherein a first portion of one of the pair of finelypatterned conductive lines extends in a first direction and a secondportion of one of the pair of finely patterned conductive lines extendsin a second direction, wherein the second direction is perpendicular tothe first direction, and wherein each finely patterned conductive lineof the pair of finely patterned conductive lines is spaced apart with afirst width; and a pair of broadly patterned conductive contacts eachhaving opposing surfaces facing each other, wherein one of the pair ofbroadly patterned conductive contacts is adjacent to an end of thesecond portion of the one of the pair of finely patterned conductivelines, wherein each broadly patterned conductive contact of the pair ofbroadly patterned conductive contacts is spaced apart with a secondwidth, wherein the second width is greater than the first width, andwherein a sidewall of the second portion of the one of the pair offinely patterned conductive lines is aligned with a sidewall of the oneof the pair of broadly patterned conductive contacts.
 6. Thesemiconductor device of claim 5, wherein bottom surfaces of the pair offinely patterned conductive lines and the pair of broadly patternedconductive contacts are coplanar.
 7. The semiconductor device of claim5, wherein the pair of finely patterned conductive lines comprisefeature sizes less than those readily attainable under the resolution ofthe photolithography system used in their formation.
 8. Thesemiconductor device of claim 5, wherein the first width is less than awidth readily attainable under the resolution of the photolithographysystem used in their formation.
 9. The semiconductor device of claim 5,wherein the substrate comprises a cell array region and a cell contactregion, wherein the pair of finely patterned conductive lines is formedin the cell array region and in the cell contact region, and wherein thepair of broadly patterned conductive contacts is formed in the cellcontact region.
 10. The semiconductor device of claim 5 furthercomprising a plurality of pairs of broadly patterned conductivecontacts, wherein the plurality of pairs of broadly patterned conductivecontacts are arranged in a step-structure formation extending in thefirst direction, and wherein each pair of broadly patterned conductivecontacts is shifted a distance in the second direction relative to itsneighboring pairs.
 11. A semiconductor device comprising: a substratehaving a cell array region and a cell contact region; a finely patternedconductive line formed on the substrate, wherein a first portion of thefinely patterned conductive line extends in a first direction in thecell array region and in the contact region, and a second portion of thefinely patterned conductive line extends in a second direction in thecell contact region, and wherein the second direction is perpendicularto the first direction; and a broadly patterned conductive contactadjacent to the end of the second portion of the finely patternedconductive line in the cell contact region, wherein the broadlypatterned conductive contact has a minimum feature size greater than afeature size of the finely patterned conductive line, wherein the finelypatterned conductive line comprises a feature size not readilyattainable under the resolution of the photolithography system used intheir formation, wherein a sidewall of the second portion of the finelypatterned conductive line extends in the second direction, and whereinthe sidewall of the second portion of the finely patterned conductiveline is collinear with a sidewall of the broadly patterned conductivecontact.
 12. The semiconductor device of claim 11, further comprising: apair of finely patterned conductive lines, wherein each line of the pairof finely patterned conductive lines is spaced apart with a first width;and a pair of the broadly patterned conductive contacts, wherein asidewall of each contact of the pair of broadly patterned conductivecontacts faces each other, wherein one of the pair of broadly patternedconductive contacts is adjacent to an end of the second portion of theone of the pair of finely patterned conductive lines, wherein eachcontact of the pair of broadly patterned conductive contacts is spacedapart with a second width, wherein the second width is greater than thefirst width, and wherein a sidewall of the second portion of the one ofthe pair of finely patterned conductive lines is aligned with a sidewallof the one of the pair of broadly patterned conductive contacts.
 13. Thesemiconductor device of claim 12, wherein the first width is less thanthose readily attainable under the resolution of the photolithographysystem used in their formation.
 14. The semiconductor device of claim 11further comprising a plurality of the pair of broadly patternedconductive contacts, wherein the plurality of pairs of broadly patternedconductive contacts are arranged in a step-structure extending in thefirst direction, and wherein each pair of broadly patterned conductivecontacts is shifted a distance in the second direction relative to itsneighboring pairs. 15-44. (canceled)